ds30349 rev. 5 - 2 1 of 6 dda (xxxx) k www.diodes.com diodes incorporated epitaxial planar die construction complementary npn types available (ddc) built-in biasing resistors available in lead free/rohs compliant version (note 3) characteristic symbol value unit supply voltage, (1) to (6) and (4) to (3) v cc 50 v input voltage, (2) to (1) and (5) to (4) dda124ek dda144ek dda114yk dda123jk dda114ek dda143tk dda114tk v in +10 to -40 +10 to -40 +6 to -40 +5 to -12 +10 to -40 +5 vmax +5 vmax v output current dda124ek dda144ek dda114yk dda123jk dda114ek dda143tk dda114tk i o -30 -30 -70 -100 -50 -100 -100 ma output current all i c (max) -100 ma power dissipation (total) p d 300 mw thermal resistance, junction to ambient air (note 1) r ja 416.7 c/w operating and storage and temperature range t j ,t stg -55 to +150 c features maximum ratings @ t a = 25 c unless otherwise specified a m j l d b c h k g pxx ym pxx ym mechanical data case: sot-26 case material: molded plastic. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminal connections: see diagram terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish annealed over copper leadframe). please see ordering information, note 5, on page 2 marking: date code and marking code (see diagrams & page 2) ordering information (see page 2) weight: 0.015 grams (approximate) new product p/n r1 r2 marking dda124ek dda144ek dda114yk dda123jk dda114ek dda143tk dda114tk 22k 47k 10k 2.2k 10k 4.7k 10k 22k 47k 47k 47k 10k - - p17 p20 p14 p06 p13 p07 p12 r 1 r 1 r 2 6 5 4 1 2 3 r 2 r 1 6 5 4 3 2 1 r 1 r 1 , r 2 r 1 only schematic diagram dda (xxxx) k pnp pre-biased small signal sot-26 dual surface mount transistor note: 1. mounted on fr4 pc board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 2. 200mw per element must not be exceeded. 3. no purposefully added lead. sot-26 dim min max typ a 0.35 0.50 0.38 b 1.50 1.70 1.60 c 2.70 3.00 2.80 d 0.95 g 1.90 h 2.90 3.10 3.00 j 0.013 0.10 0.05 k 1.00 1.30 1.10 l 0.35 0.55 0.40 m 0.10 0.20 0.15 0 8 all dimensions in mm
ds30349 rev. 5 - 2 2 of 6 dda (xxxx) k www.diodes.com characteristic symbol min typ max unit test condition input voltage dda124ek dda144ek dda114yk dda123jk dda114ek v l(off) -0.5 -0.5 -0.3 -0.5 -0.5 -1.1 -1.1 -1.1 v v cc = -5v, i o = -100 a dda124ek dda144ek dda114yk dda123jk dda114ek v l(on) -1.9 -1.9 -1.9 -3.0 -3.0 -1.4 -1.1 -3.0 v o = -0.3, i o = -5ma v o = -0.3, i o = -2ma v o = -0.3, i o = -1ma v o = -0.3, i o = -5ma v o = -0.3, i o = -10ma output voltage dda124ek dda144ek dda114yk dda123jk dda114ek v o(on) -0.1 -0.3 v i o /i l = -10ma /- 0.5ma i o /i l = -10ma /- 0.5ma i o /i l = -5ma / -0.25ma i o /i l = -5ma / -0.25ma i o /i l = -10ma / -0.5ma input current dda124ek dda144ek dda114yk dda123jk dda114ek i l -0.36 -0.18 -0.88 -3.6 -0.88 ma v i = -5v output current i o(off) -0.5 a v cc = 50v, v i = 0v dc current gain dda124ek dda144ek dda114yk dda123jk dda114ek g l 56 68 68 80 30 v o = -5v, i o = -5ma v o = -5v, i o = -5ma v o = -5v, i o = -10ma v o = -5v, i o = -10ma v o = -5v, i o = -5ma input resistor (r 1 ) tolerance r 1 -30 +30 % resistance ratio tolerance r 2 /r 1 -20 +20 gain-bandwidth product* f t 250 mhz v ce = -10v, i e = -5ma, f = 100mhz electrical characteristics @ t a = 25 c unless otherwise specified new product * transistor - for reference only characteristic (dda143tk & dda114tk only) symbol min typ max unit test condition collector-base breakdown voltage bv cbo -50 v i c = -50 a collector-emitter breakdown voltage bv ceo -50 v i c = -1ma emitter-base breakdown voltage bv ebo -5 v i e = -50 a collector cutoff current i cbo -0.5 a v cb = -50v emitter cutoff current i ebo -0.5 a v eb = -4v collector-emitter saturation voltage v ce(sat) -0.3 v i c /i b = -2.5ma /- 0.25ma dda143tk i c /i b = -1ma /- 0.1ma dda114tk dc current transfer ratio h fe 100 250 600
i c = -1ma, v ce = -5v input resistor (r 1 ) tolerance r 1 -30 +30 % gain-bandwidth product* f t 250 mhz v ce = -10v, i e = 5ma, f = 100mhz notes: 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. for lead free/rohs compliant version part numbers, please add "-f" suffix to the part numbers above. example: dda114tk-7- f. device packaging shipping dda124ek-7 sot-26 3000/tape & reel dda144ek-7 sot-26 3000/tape & reel dda114yk-7 sot-26 3000/tape & reel dda123jk-7 sot-26 3000/tape & reel dda114ek-7 sot-26 3000/tape & reel dda143tk-7 sot-26 3000/tape & reel dda114tk-7 sot-26 3000/tape & reel ordering information (note 4)
ds30349 rev. 5 - 2 3 of 6 dda (xxxx) k www.diodes.com new product month jan feb mar apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 2006 2007 2008 2009 2010 2011 2012 code t uv wxy z date code key pxx = product type marking code see sheet 1 diagrams ym = date code marking y = year ex: t = 2006 m = month ex: 9 = september pxx ym pxx ym marking information
ds30349 rev. 5 - 2 4 of 6 dda (xxxx) k www.diodes.com new product 0.1 1 10 01020304050 i , collector current (ma) fi g . 6 input volta g e vs. collector current c v = 0.2v o v , input voltage (v) in -25c 25c 75 c 0.001 0.01 1 10 100 0 1 234 89 10 i , collector current (ma) c v , input voltage (v) fi g . 5 collector current vs. input volta g e in -25c 5 67 25c 0.1 v=5v o 75c 0 2 4 6 12 0 20 30 c , c apa c itance (pf) ob v , reverse bias voltage (v) fig. 4 output capacitance r 10 5 15 25 8 10 f = 1mhz 10 1000 100 1 10 100 h , dc current gain fe i , collector current (ma) c fi g . 3 dc current gain v=10v ce 75 c -25 c 25 c 0.001 0.01 0.1 1 0 10 20 30 40 50 v , collector emitter voltage (v) ce(sat) fig. 2 i , collector current (ma) v vs. i c ce ( sat ) c i/i =10 cb -25 c 75 c 25 c -50 0 50 100 150 2 5 0 200 150 50 100 0 t , ambient temperature ( c) fi g . 1 deratin g curve a p , power dissipation (mw) d typical curves - dda123jk one section
ds30349 rev. 5 - 2 5 of 6 dda (xxxx) k www.diodes.com new product 1 1 10 01020304050 i , collector current (ma) fi g . 6 input volta g e vs. collector current c v = 0.2v o v , input voltage (v) in -25c 25c 75 c 0.01 0.1 1 10 100 01234 89 10 i , collector current (ma) c v , input voltage (v) fi g . 5 collector current vs. input volta g e in -25c 5 67 75c 25c 0.001 0 6 12 0 20 30 c , c apa c itance (pf) ob v , reverse bias voltage (v) fig. 4 output capacitance r 10 5 15 25 10 8 4 2 f=1mhz 10 1000 100 1 1 10 100 h , dc current gain fe i , collector current (ma) c fi g . 3 dc current gain v=10v ce 75 c -25 c 25 c 0.001 0.01 0.1 1 0 10 20 30 40 50 v , collector emitter voltage (v) ce(sat) fig. 2 i , collector current (ma) v vs. i c ce ( sat ) c i/i =10 cb -25 c 25 c 75 c -50 0 50 100 150 2 5 0 200 150 50 100 0 t , ambient temperature ( c) fi g . 1 deratin g curve a p , power dissipation (mw) d typical curves - dda114tk one section
ds30349 rev. 5 - 2 6 of 6 dda (xxxx) k www.diodes.com important notice life support diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes witho ut further notice to any product herein. diodes incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on our website, harmless against all damages. diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written appr oval of the president of diodes incorporated. new product
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